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  preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. july 2007 rev 1 1/10 10 STGW30N90D n-channel 900v - 30a - to-247 very fast powermesh? igbt features low on-losses low on-voltage drop (v cesat ) high current capability high input impedance (voltage driven) low gate charge ideal for soft sw itching application description using the latest high voltage technology based on its patented strip layout , stmicroelectronics has designed an advanced family of igbts, with outstanding performances. application induction heating figure 1. internal schematic diagram type v ces v ce(sat) @25c i c @100c STGW30N90D 900v < 2.75v 30a to-247 table 1. device summary order code marking package packaging STGW30N90D gw30n90d to-247 tube www.st.com
contents STGW30N90D 2/10 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
STGW30N90D electrical ratings 3/10 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 900 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at 25c 60 a i c (1) collector current (continuous) at 100c 30 a i cl (2) 2. vclamp=900v, tj=125c, r g =10 ? , v ge =15v collector current (pulsed) 135 a v ge gate-emitter voltage 25 v p tot total dissipation at t c = 25c 220 w i f diode rms forward current at t c = 25c 30 a t j operating junction temperature ?55 to 150 c t stg storage temperature table 3. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case 0.57 c/w rthj-amb thermal resistance ju nction-ambient (diode) 1.6 c/w rthj-amb thermal resistance ju nction-ambient (igbt) 50 c/w i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () ------------------------------------------------------------------------------------------------------ =
electrical characteristics STGW30N90D 4/10 2 electrical characteristics (t case =25c unless otherwise specified) table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1ma, v ge = 0 900 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 20a, tj= 25c v ge = 15v, i c = 20a, tj=125c 2.2 2.0 2.75 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250a 3.75 5.75 v i ces collector-emitter leakage current (v ce = 0) v ge =max rating,tc=25c v ge =max rating, tc=125c 500 10 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v, v ce = 0 100 na g fs forward transconductance v ce = 25v , i c = 20a 14 s table 5. dynamic electrical characteristics symbol parameter test cond itions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1 mhz, v ge =0 2510 175 30 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 900v, i c = 20a,v ge =15v 110 16 49 120 nc nc nc
STGW30N90D electrical characteristics 5/10 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 900v, i c = 20a r g = 10 ? , v ge = 15v, tj=25c (see figure 2) 29 11 1820 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 900v, i c = 20a r g = 10 ? , v ge = 15v, tj= 125c (see figure 2) 27 14 1580 ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 900v, i c = 20a r g = 10 ? , v ge = 15v, tj= 25c (see figure 2) 90 275 312 ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 900v, i c = 20a r g = 10 ? , v ge = 15v, tj= 125c (see figure 2) 150 336 592 ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 900v, i c = 20a r g =10 ? , v ge = 15v, tj= 25c (see figure 2) 1660 4438 6096 j j j eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 900v, i c = 20a r g =10 ? , v ge = 15v, tj= 125c (see figure 2) 3015 6900 9915 j j j table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage if = 20a, tj = 25c if = 20a, tj = 125c 1.9 1.7 2.5 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current if = 20a, v r = 27v, t j = 125c, di/dt = 100a/s (see figure 5) 152 722 9 ns nc a
test circuit STGW30N90D 6/10 3 test circuit figure 2. test circuit for inductive load switching figure 3. gate charge test circuit figure 4. switching waveform figure 5. diode recovery time waveform
STGW30N90D package mechanical data 7/10 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STGW30N90D 8/10 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STGW30N90D revision history 9/10 5 revision history table 9. revision history date revision changes 19-jul-2006 1 first issue.
STGW30N90D 10/10 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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